منابع مشابه
Characterizing the Switching Thresholds of Magnetophoretic Transistors.
The switching thresholds of magnetophoretic transistors for sorting cells in microfluidic environments are characterized. The transistor operating conditions require short 20-30 mA pulses of electrical current. By demonstrating both attractive and repulsive transistor modes, a single transistor architecture is used to implement the full write cycle for importing and exporting single cells in sp...
متن کاملFast-switching all-printed organic electrochemical transistors
Symmetric and fast (~ 5 ms) on-to-off and off-to-on drain current switching characteristics have been obtained in screen printed organic electrochemical transistors (OECT) including PEDOT:PSS (poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonic acid)) as the active transistor channel material. Improvement of the drain current switching characteristics is made possible by including...
متن کاملSteep switching devices for low power applications: negative differential capacitance/resistance field effect transistors
Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in which a ferroelectric layer is added within its gate stack. The other is phase FET (i.e., negative resistance ...
متن کاملActive Power Filter with Soft Switching
The paper describes used techniques, operation characteristics and develops information of the unconventional soft switched active power filter. The power part is based on progressive IGBT’s and high speed voltage and current sensors. The APF is connected in parallel to the AC input of the system, and corrects all loads directly from the AC main. Control unit is based on use of digital signal p...
متن کاملLow Power Cmos Full Adder Design with 12 Transistors
In present work two new designs for single bit full adders have been presented using three transistors XOR gates. Adder having twelve transistors shows power consumption of 1274μW with maximum output delay of 0.2049ns. Power consumption and maximum output delay shows variation [1274 141.77] μW & [0.2049 – 0.4167] ns with varying supply voltage from [3.3 1.8] V. Further, reverse body bias techni...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Interface magazine
سال: 2013
ISSN: 1064-8208,1944-8783
DOI: 10.1149/2.f05131if